SEMI-CONDUCTOR DEVICE FOR SAFE ELECTRONIC ELEMENT Russian patent published in 2008 - IPC H01L29/02 

Abstract RU 2328056 C2

FIELD: electricity.

SUBSTANCE: in semi-conductor device that contains crystal with structurally integrated passive and active components, field transistor with depletion of channel, diode sink-base and high-resistance resistor are integrated in structure of crystal so that breakdown of electric connections of its internal components is impossible failure. In other variant of semi-conductor device for safe electronic element; at least, two external outputs of semi-conductor device correspond to one contact platform of crystal, and each output is connected with contact platform of crystal with discontiguous links.

EFFECT: invention allows to manufacture semi-conductor devices for safe electronic elements.

2 cl, 4 dwg

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RU 2 328 056 C2

Authors

Baranovskij Dmitrij Moiseevich

Dates

2008-06-27Published

2005-11-01Filed