FIELD: physics, computer engineering.
SUBSTANCE: magnetic random access memory (MRAM) cell comprises a magnetic tunnel junction comprising a tunnel barrier layer between a first magnetic layer having a first magnetisation direction, and a second magnetic layer having a second magnetisation direction being adjustable from a first direction to a second direction so as to vary junction resistance of the magnetic tunnel junction from a first to a second junction resistance level. Said magnetic tunnel junction further comprises a resistive switching element electrically connected to the magnetic tunnel junction and having a switching resistance which can be switched from a first to a second switching resistance level when a switching current passes through the resistive switching element. The MRAM cell resistance can have at least four different cell resistance levels depending on the resistance level of the junction resistance and the switching resistance. The tunnel barrier layer consists of a resistive switching element.
EFFECT: improved readability for a MRAM cell.
13 cl, 6 dwg, 3 ex
