FIELD: physics, computer engineering.
SUBSTANCE: invention relates to computer engineering. A multilevel magnetic element comprises a first tunnel barrier layer between a sensitive layer having magnetisation which can be freely aligned and a first storage layer having magnetisation which is fixed at a first low temperature threshold and can be freely aligned at a first high temperature threshold, wherein the magnetic element further comprises a second tunnel barrier layer and a second storage layer having magnetisation which is fixed at a first low temperature threshold and can be freely aligned at a second high temperature threshold, the sensitive layer being formed between the first and second tunnel barrier layers.
EFFECT: longer service life of the magnetic element owing to low heating current required to heat the magnetic element.
12 cl, 3 dwg, 4 tbl
