FIELD: computer engineering.
SUBSTANCE: invention relates to computer engineering. Cell of magnetic random access memory (MRAM) comprises a magnetic tunnel junction including a storage layer having a net magnetization for writing data, which is controlled from the first direction to the second direction when the magnetic tunnel junction is heated to high temperature threshold, and which is fixed at low-temperature threshold; reading layer having a net magnetization for reading, which is reversible; and a tunnel barrier layer separating the reading layer from the storage layer; besides, at least one of the memory layer and reading layer contains material of ferrimagnetic 3d-4f amorphous alloy containing subarray of atoms of transition 3d-metals providing the first magnetisation, and subarray of atoms of rare-earth 4f-elements, providing a second magnetisation, so that at compensation temperature of said at least one of the memory layer and reading layer the first magnetisation is equal to the second.
EFFECT: technical result ensured MRAM cell recording and reading with a weak recording/reading field.
9 cl, 3 dwg
