SENSOR OF ABSOLUTE PRESSURE OF INCREASED SENSITIVITY BASED ON SEMICONDUCTOR SENSITIVE ELEMENT Russian patent published in 2015 - IPC G01L9/04 

FIELD: measurement equipment.

SUBSTANCE: absolute pressure sensor comprises a body with a nozzle, a metal membrane, transmitting pressure action via non-compressible liquid to a semiconductor sensitive element, made in the form of a profiled single crystal of silicon of plane (100) with a square membrane, connected by electrostatic method in vacuum with a glass base, on the flat surface of the profiled single crystal there are strain gauges combined into a bridge measurement circuit. Centres of strain gauges are arranged at the distance l from mutually perpendicular axes Ox and Oy, pulled via the centre of the membrane, lying in the plane and parallel to borders of the thin part of the membrane with the base of the semiconductor sensitive element, which is determined on the basis of the following ratio: $$l=\frac{a_m}{2}\cdot \frac{\mathrm{0,99}}{1-\mathrm{0,948}\cdot e^{-\mathrm{0,359}\cdot \frac{a_m}{h_m}}}\left(1\right),$$ where a_m - size of membrane of semiconductor crystal; hm - thickness of membrane of semiconductor crystal.

EFFECT: increased sensitivity of a device.

3 dwg