THREE-COLLECTOR BIPOLAR MAGNETIC TRANSISTOR Russian patent published in 2013 - IPC H01L29/82 

FIELD: electricity.

SUBSTANCE: three-collector bipolar magnetic transistor contains silicone single-crystal substrate, diffused tub, base zone in tub, emitter zones, the first and second measurement collectors at base, area of contacts; it is distinguished by location of emitter area and areas of collectors. Areas of emitter and collectors are located at base at distance from each other, along boundary of pn-junction of base-tub with low rate of surface recombination; contacts to tub are located in the tub near the boundary of pn-junction of base-tub, opposite to collectors while contacts to base are located between emitter and collectors; contacts to tub are connected to contacts to base by metallisation. Difference of collector current values in magnetic field corresponds to measured magnetic induction component vector of parallel crystal surface.

EFFECT: enhancement in sensitivity of magnetic field parallel to crystal surface.

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