METHOD OF MAKING STATIC RANDOM ACCESS MEMORY AND STATIC RANDOM ACCESS MEMORY (RAM) Russian patent published in 2015 - IPC G11C5/02 G11C11/00 

Abstract RU 2559768 C2

FIELD: physics, computer engineering.

SUBSTANCE: invention relates to computer engineering. A method of making static random access memory includes arranging data bit storage units and data read buses and data write buses in space, wherein a memory cell is structurally divided into three types of modules: a data bit storage module, a write port module and a read port module, wherein the write port module is arranged separately from the storage module and connected to the input of the data bit storage module, and the read port module is arranged separately from the storage module and connected to the output of the storage module.

EFFECT: improving noise-immunity of the RAM by reducing the capacitance of parasitic capacitors between components of the device.

3 cl, 3 dwg

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RU 2 559 768 C2

Authors

Bobkov Sergej Gennad'Evich

Tarasov Igor' Vladimirovich

Kirichenko Pavel Grigor'Evich

Dates

2015-08-10Published

2013-11-20Filed