FIELD: electronic technology.
SUBSTANCE: invention relates to active electronic components. Photon precision sensor on a semiconductor thyristor with one photosensitive n-p-junction and two light-emitting p-n-junction is designed as a semiconductor device. Optical positive feedback between p-n-junctions is formed inside the thyristor for an avalanche-like current rise when a photon hits a photosensitive n-p-junction.
EFFECT: use of a precision sensor will increase the sensitivity of photodetectors with a simultaneous decrease in weight and size parameters.
1 cl, 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| SEMICONDUCTOR DEVICE FOR AMPLIFICATION OF PHOTON FLUX WITH PHOTOSENSITIVE AND LIGHT-EMITTING P-N-JUNCTIONS | 2018 |
|
RU2693834C1 |
| FIELD THYRISTOR WITH NON-ISOLATED PHOTOSENSITIVE OPTICAL GATE AND LIGHT-EMITTING P-N-JUNCTION | 2018 |
|
RU2693839C1 |
| PHOTODETECTOR ON CASCADE TRANSISTORS WITH LIGHT EMITTING P-N-JUNCTIONS AND PHOTOSENSITIVE N-P-JUNCTIONS | 2018 |
|
RU2673424C1 |
| BIPOLAR SEMICONDUCTOR TRANSISTOR WITH THYRISTOR EFFECT | 2018 |
|
RU2701184C1 |
| LIGHT THYRISTOR | 2014 |
|
RU2562744C2 |
| LIGHT TRANSISTOR WITH TWO EMITTING JUNCTIONS | 2014 |
|
RU2593443C2 |
| LIGHT TRANSISTOR WITH HIGH EFFICIENCY | 2012 |
|
RU2507632C2 |
| HIGH-VOLTAGE PLANAR P-N JUNCTION | 1991 |
|
RU2019894C1 |
| METHOD AND APPARATUS FOR MEASURING TRANSIENT THERMAL CHARACTERISTICS OF LIGHT-EMITTING DIODES | 2013 |
|
RU2523731C1 |
| METHOD OF MAKING SEMICONDUCTOR STRUCTURE WITH p-n JUNCTIONS | 2011 |
|
RU2461093C1 |
