FIELD: electronics.
SUBSTANCE: invention relates to active electronic components. Semiconductor device for amplification of photon flux with photosensitive and light-emitting transitions is made in form of two semiconductor thyristors, wherein in the first thyristor the central p-n-junction is made as photosensitive, and side p-n-junctions are made by light-emitting, and in the second thyristor the central p-n-junction is made as light-emitting, and side p-n-junctions are made as photosensitive.
EFFECT: invention provides the possibility of amplifying the photon flux, which will make it possible to increase efficiency of optical signal main amplifiers in fiber-optic communication lines, possibility of producing super-sensitive photon sensors in a wide dynamic range.
1 cl, 1 dwg
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