METHOD FOR VACUUM SPUTTERING OF STRUCTURES FOR ELECTRONIC DEVICES, METHOD OF CONTROLLING DOPANT CONCENTRATION WHEN GROWING SAID STRUCTURES AND RESISTIVE SOURCE OF VAPOUR OF SPUTTERING MATERIAL AND DOPANT FOR REALISING SAID CONTROL METHOD, AND METHOD FOR VACUUM SPUTTERING OF SILICON-GERMANIUM STRUCTURES BASED ON USE OF SAID VAPOUR SOURCE Russian patent published in 2014 - IPC H01L21/203 C23C14/26 

FIELD: physics.

SUBSTANCE: invention relates to semiconductor structures for electronic devices. The invention enables precision variation of dopant concentration in a wide range in the structure being grown by varying temperature and the physical state of the dopant source from the sputtered doped material. The method for vacuum sputtering of structures for electronic devices involves obtaining a vapour stream with simultaneous participation of a plate whose heating temperature is kept at a level which ensures the growth rate of the sputtered structure required for effective embedding of dopants into the growing structure and a group of plates distinguished by dopants, the heating temperature of which is varied to control dopant concentration in the growing structure by altering composition of the vapour stream by varying the rate of formation of dopant vapour. The resistive dopant source from the sputtered doped material is made in form of a plate such that the central band of the plate in the direction between current leads has a larger thickness than bands adjoining the edges of the plate.

EFFECT: disclosed solution enables to minimise the amount of resistively heated dopant sources and dope structures with multiple dopants at the same time.

8 cl, 2 dwg