FIELD: electrical engineering.
SUBSTANCE: invention relates to electrical engineering. Method of making a magnetic tunnel junction suitable for a magnetic random access memory (MRAM) cell and comprising a first ferromagnetic layer, a tunnel barrier layer, and a second ferromagnetic layer comprises: forming a first ferromagnetic layer; forming a tunnel barrier layer; and forming a second ferromagnetic layer; wherein said forming tunnel barrier layer (22) comprises depositing a layer of metallic Mg; and oxidising deposited layer of metallic Mg so as to transform metallic Mg into MgO. Step of forming tunnel barrier layer is performed at least twice so that tunnel barrier layer comprises at least two layers of MgO.
EFFECT: technical result consists in reduced defectiveness and high breakdown voltage.
10 cl, 3 dwg
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