METHOD FOR ASSESSMENT OF ELECTROMIGRATION PARAMETERS IN METAL CONDUCTORS Russian patent published in 2015 - IPC G01R31/18 

FIELD: electricity.

SUBSTANCE: invention is referred to the area of microelectronics and may be used for assessment and control of metallization reliability, namely to metal layout, at manufacture of integrated microcircuits in order to optimize production process and to increase information content. The method consists in testing of metal conductors in integrated circuits at three different temperatures T₁, T₂ and T₃ due to self-heating by passing current with further calculation of electromigration parameters: energy of activation , exponent index $$n=\{\ln \left(t_{{50}_1}/t_{{50}_2}\right)-E_a\cdot \left(1/T_1-1/T_2\right)/k\}/\ln \left(j_2/j_1\right)$$ and electromigration constant for metal conductors $$A=t_{{50}_1}\cdot j_1^n/\exp \left(E_a/\left(k\cdot T_1\right)\right)$$ , where $$\left(t_{{50}_1};{\sout{j}}_1\right)$$ , $$\left(t_{{50}_2};{\sout{j}}_2\right)$$ , $$\left(t_{{50}_3};{\sout{j}}_3\right)$$ is median time between failures of metal conductors and median value of current density that heats up the above conductors up to testing temperature T₁, T₂, T₃ respectively.

EFFECT: reduced time of testing for test structures in order to obtain electromigration parameters.

8 dwg, 6 tbl