METHOD OF PRODUCING HIGHLY EFFICIENT AND ELECTRICALLY STABLE SEMICONDUCTOR LAYERS OF METAL OXIDES, LAYERS MADE USING THIS METHOD, AND USE THEREOF Russian patent published in 2016 - IPC H01L29/786 H01L21/316 

FIELD: electronics.

SUBSTANCE: this invention relates to a method of semiconductor laminate producing which includes first and second layers of metal oxide, as well as a dielectric layer, wherein the first metal oxide layer is located between the second layer of metal oxide and dielectric layer and has thickness equal to or less than 20 nm. First and second layers of metal oxides are made from the first and second liquid phases respectively. This invention also relates to electronic components which include such semiconductor laminate.

EFFECT: invention allows to increase electrical stability of structure layers without reducing the mobility of charge carriers in semiconductor layer.

28 cl, 3 dwg, 1 tbl