FIELD: thin-film technology, possibly procedures for applying films in microelectronics, nano-electronics and opto-electronics with use of magnetron, electron beam and other methods.
SUBSTANCE: method comprises steps of supplying to growth surface metal flow and applying film simultaneously from two targets by magnetron method; using as one target ceramic on base of metal oxide and using the metal itself as other target.
EFFECT: improved structure of crystalline layers due to creation of practically equilibrium condition for depositing films in the result of forming uniform layers without column-structure zones.
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| Title | Year | Author | Number |
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