METHOD OF MAKING INDIUM MICROCONTACTS BY ION ETCHING Russian patent published in 2013 - IPC H01L21/28 

FIELD: physics.

SUBSTANCE: in the method of making indium microcontacts, a wafer with arrays of large integrated circuits or photodiode arrays is protected by a photoresist film which is perforated at contact points, a layer of indium having a thickness which corresponds to the height of the microcontacts is sprayed, and a photoresist mask is deposited by photolithography. Microcontacts are formed by etching with ions of an inert gas until indium is fully sprays in spaces between the contacts; remains of the photoresist mask on tops of the microcontacts and the bottom protective film are removed in organic solvents or by etching in oxygen plasma.

EFFECT: technique for forming microcontacts by a separating interval at the base.

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