METHOD OF LOWERING OF OHMIC RESISTANCE OF INDIUM MICROCONTACTS USING THERMAL ANNEALING Russian patent published in 2014 - IPC H01L21/28 

FIELD: physics, photography.

SUBSTANCE: invention relates to technology of manufacture of indium microcontacts in IR array photodetectors with photoelectric signal reading LSI circuits. A method of lowering of ohmic resistance of indium microcontacts using thermal annealing with semiconductor wafers with arrayes the LSI circuit of reading or photodiode arrays includes the forming of metal underlayer under indium, forming of protective photoconductivity mask with windows in places of microcontacts, deposition of indium layer, manufacture of indium contacts and annealing of structures in recovery atmosphere or vacuum at the temperature minimum 240°C within 30 minutes.

EFFECT: invention provides manufacture of indium microcontacts with low resistance and high homogeneity of their values within large arrays.

5 dwg