METHOD FOR ASSEMBLING PHOTODETECTOR UNIT Russian patent published in 2007 - IPC H01L21/98 

FIELD: assembling infrared photodetector units and silicon read-out large-scale integrated circuits affording reliable connection between components of photodetector matrix and read-out one.

SUBSTANCE: proposed method for assembling photodetector unit includes evaporation of indium layer onto semiconductor materials, formation of indium columns by way of photolithography followed by interconnection of matrices of photosensitive components and silicon read-out large-scale integrated circuit; indium layer, 8 - 20 μm thick, used for producing columns is applied by high-vacuum evaporation on matrices of photosensitive components and silicon read-out large-scale integrated circuit being cooled down to (15 - 20) °C at a rate of 0.1 - 1 μm/min.

EFFECT: enhanced reliability of electrical connection between matrices of photosensitive components and silicon read-out large-scale integrated circuit.

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