METHOD OF MAKING INDIUM STUDS Russian patent published in 2009 - IPC H01L21/441 

FIELD: physics.

SUBSTANCE: to make indium studs, a photoresist layer and a layer of indium are deposited on a temporary silicon substrate. The indium layer undergoes photolithographic processing with subsequent drying in a thermostat or on a hot substrate. The temporary substrate is cut into crystal-donors and the indium layer is etched to a photoresist, resulting in formation of indium studs on the crystal-donor. The crystals are exposed to UV-radiation and exposed layers of masking photoresist are dissolved from the indium studs and the photoresist between the indium studs. The photoresist under the studs does not dissolve. Contacts of the working crystal and indium studs of the crystal-donor are mated, after which mated crystals are treated with a photoresist solvent so that, the crystal-donor separates and the indium studs remain on the working crystal. The required height of indium studs on the working crystal can be provided for by repeated transfer of indium studs from the crystal-donor.

EFFECT: invention allows for retention of initial electrophysical properties of infrared material.

3 cl, 8 dwg