FIELD: photo equipment.
SUBSTANCE: usage: for the manufacture of indium microcontacts in the matrix photodetectors. Essence of the invention lies in the fact that the method of improving the adhesion of indium microcontacts using ultrasonic processing on semiconductor wafers with BIS readout arrays or photodiode arrays includes the formation of a metal sublayer under indium, the formation of a protective photoresistive mask with windows in places of microcontacts, sputtering of an indium layer, manufacturing indium microcontacts in one of the ways: removing a protective mask with an indium layer around microcontacts (explosion method), forming a mask for etching on an indium layer with subsequent etching of a layer with one of the known methods (chemical etching, ion etching) with the subsequent removal of photoresist layers, while after forming the microcontact system, the plates are processed in an ultrasonic bath for several minutes.
EFFECT: technical result: providing the possibility of high adhesion of indium microcontacts and high homogeneity of its values within large arrays.
1 cl, 5 dwg
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Authors
Dates
2018-12-26—Published
2017-02-10—Filed