METHOD FOR MANUFACTURING OF INTEGRATED MICROMECHANICAL RELAY Russian patent published in 2015 - IPC H01L41/22 H01L27/20 B81C1/00 

FIELD: electricity.

SUBSTANCE: method for manufacturing of integrated micromechanical relay with movable electrode made as structure with piezoelectric layer (7) is implemented at surface of silicone wafers in single technological cycle of manufacturing technology for integrated circuits. To this end at surface of silicone substrate (1) dielectric layer (2) is formed of SiO₂ film by thermal oxidation; current conductive layer TiN (3) is sputtered and a fixed electrode is formed by ion-beam deposition and etching using projection laser photolithography. Layer Si3N4 is deposited by CVD method with its pre-treatment as a sacrificial layer with further plasma etching. The first current conductive layer TiN (4) is sputtered, dielectric layer SiC (5) with high resilient properties is deposited by magnetronic deposition. The second current conductive layer TiN (6) is sputtered. LZT piezoelectric layer (7) is deposited. The third current conductive layer TiN (8) is sputtered. Then plasma-chemical etching is performed for the following layers: the third current conductive layer TiN (8), LZT piezoelectric layer (7), the second current conductive layer TiN (6), dielectric layer SiC (5) with high resilient properties, the first current conductive layer TiN (4) with formation of a movable multilayer electrode and penetration of sacrificial layer Si₃N₄. Etching of sacrificial layer Si₃N₄ is made with an air gap formed between the fixed and movable electrodes.

EFFECT: improved reliability and timing stability of integrated micromechanical relay.

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