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2 574 176

(13)

(51)

IPC

G01N21/01(2006-01-01)

G02F1/00(2006-01-01)

C23C30/00(2006-01-01)

G01J3/44(2006-01-01)

(21) (22)

Application

2011110372/02, 2011-03-15

(24)

Start date

2011-03-15

(22)

Actual filing date

2011-03-15

(45)

Published

2016-02-10

(72)

Inventor

Kholist RobertKaminska AgneshkaDzhiesielevski Igor'Porovski Sil'VestrSuski TadeushVejkher Jan

(73)

Holder

Institut Kemii Fizishnej Pol'Skij Akademii NaukInstitut Vjsokich Sisnien Pol'Skij Akademii Nauk

SUBSTRATE FOR SURFACE-ENHANCED RAMAN-SCATTERING ANALYSIS Russian patent published in 2016 - IPC G01N21/01 G02F1/00 C23C30/00 G01J3/44

Abstract RU 2574176 C2

FIELD: physics, optics.

SUBSTANCE: substrate has a semiconductor surface having whisker crystals coated with a film of a metal selected from a group consisting of silver, gold, platinum, copper and/or alloys thereof. The material for the semiconductor surface used is a mixed nitride of aluminium, gallium and indium. Each formed whisker crystal has a linear defect inside. The surface density of the whisker crystals, having a linear defect inside, ranges from 10⁸/cm² and 10¹⁰/cm², and the length of the whisker crystals ranges from 0.2 mcm to 2.0 mcm, and the diameter of the whisker crystals ranges from 40 nm to 150 nm. The ratio of the length of the whisker crystals having a linear defect inside to their diameter ranges from 5 to 50, and the thickness of the metal film on the semiconductor surface ranges from 50 nm to 150 nm.

EFFECT: obtaining a substrate for surface-enhanced Raman-scattering analysis.

13 cl, 9 dwg, 3 ex

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RU 2 574 176 C2

Authors

Kholist Robert

Kaminska Agneshka

Dzhiesielevski Igor'

Porovski Sil'Vestr

Suski Tadeush

Vejkher Jan

Dates

2016-02-10—Published

2011-03-15—Filed