FIELD: radio engineering.
SUBSTANCE: invention can be used for production of radioelectronic devices. When mounting a power semiconductor element containing housing, heat-removing base connected to housing, at least one crystal, located in housing on heat-removing base, and outputs for transfer of high-frequency signal, first heat-removing base in area, maximally close to said at least one crystal, electrically and mechanically connected to grounding surface, at least one intermediate printed circuit board, having thickness to provide for its elastic deformation. Outputs for transfer of high-frequency signal are electrically connected with flat conductors arranged on its opposite surface to make matched sections of signal transmission. Method includes electrically and mechanically connecting said at least one intermediate printed-circuit board with main printed circuit board.
EFFECT: technical result is providing optimum matching of input and output impedances, reduction of incidental reactive component, higher maximum output power for electronic device.
4 cl, 10 dwg
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