PRODUCTION OF SINGLE-CRYSTAL DIAMOND EPITAXIAL LARGE AREA FILMS Russian patent published in 2016 - IPC C30B25/02 C30B25/20 C30B29/04 C30B33/06 C23C16/27 H01L31/36 B23K1/20 

FIELD: process engineering.

SUBSTANCE: this process comprises attachment of single-crystal diamond plates with surface orientation (100) to substrate and application of epitaxial diamond ply on said plates. Note here that, first edges of every said plate are finished before said attachment to make truncated tetrahedral pyramid with top plane oriented in crystallographic plane (100) and with four side faces oriented in planes of the type {311}. Every truncated pyramid is connected with substrate so that truncated pyramids contact with each other by their side faces. Then, diamond epitaxial ply is applied on truncated pyramids. Substrate whereto attached are monocrystalline diamond plates is made of silicon carbide. Said monocrystalline diamond plates are connected with substrate with the help of solder based on titanium and copper metals.

EFFECT: increased area of monocrystalline diamond epitaxial film grown on diamond monocrystalline substrates.

3 cl, 1 dwg