FIELD: electrical engineering.
SUBSTANCE: invention relates to semiconductor engineering and specifically to methods of making three-stage photoconverters. According to the invention, the photoconverter manufacturing method includes formation of contact metallization on the front and back surfaces of the multilayer semiconductor structure Ga(In)As/GaInP/Ga(In)As/Ge, grown on germanium substrate, etching mesa, burning contacts, separating semiconductor structure into disc-cut chips, removal of contact layer of multilayer semiconductor structure by chemical-dynamic etching in aqueous solution of tetramethylammonium hydroxide and hydrogen peroxide in quantitative ratio of tetramethylammonium hydroxide 0.3÷0.7 wt%, hydrogen peroxides 6.5÷17.7 wt%, water 93.2÷81.6 wt% and application of antireflection coating.
EFFECT: invention increases efficiency of operation of chemical-dynamic etching of the contact layer by increasing the number of simultaneously processed semiconductor structures lying freely in solution in several layers, separated by gas layer at exothermic increase of etching agent temperature, reduced consumption of tetramethylammonium due to more efficient process of contact layer etching due to increased temperature of solution and increased photoelectric parameters due to bleeding of defects introduced by disk cutting on end surface of mesa.
1 cl, 4 dwg, 2 tbl
