METHOD OF DETERMINING INTERLAYER ELECTRON RELAXATION TIME IN SEMICONDUCTOR QUANTUM DOTS BASED ON FIRST TYPE HETEROJUNCTION Russian patent published in 2016 - IPC H01L21/66 

FIELD: physics.

SUBSTANCE: invention can be used to determine time intralayer electron relaxation in semiconductor quantum dots. Disclosed method comprises measuring spectra of photosensitivity in absorption region of quantum dots of diode structures at different temperatures and/or bias voltages on diode structures on which is constructed temperature and/or field dependence of photosensitivity of diode structures for all values of temperature of diode structures and/or electric field in layer of quantum dots - measurement parameters above photosensitivity and expected time interval values of interlayer electron relaxation τ32 obtaining temperature and/or field dependence of quantum efficiency of emission η0 electron-hole pairs, and then comparing logarithms of values of obtained quantum efficiency of emission η0 and η1 with logarithms of constructed values of normalised photosensitivity of diode structures in ground and first excited optical transitions in quantum dots in whole range of measurement parameters specified for each time value interlayer electron relaxation τ32 selected increments this value within intended range and magnitude of electron relaxation time interlevel τ32, corresponding to minimum divergence compared, judged on desired interlayer electron relaxation time.

EFFECT: technical result is providing possibility of establishing an effective indirect method of determining time of interlayer electron relaxation in semiconductor quantum dots.

3 cl, 4 dwg