METHOD FOR MONITORING PRESENCE OF GaAs MATRIX DEEP DEFECTS CONNECTED WITH EMBEDDING INAS QUANTUM DOTS THEREIN Russian patent published in 2017 - IPC H01L21/66 

FIELD: physics.

SUBSTANCE: method for monitoring the presence of the GaAs matrix deep defects connected with embedding the InAs quantum dots therein, based on the capture assessment of the charge carriers by the deep defects near the InAs quantum dot layer, in which the change curve of the longitudinal surface heterostructure conductivity is measured based on the GaAs matrix, depending on the voltage of the pulse transversal unipolar electric field injecting the charge carriers into the surface area of the said heterostructure consisting of a semi-insulating GaAs substrate, a conductive buffer GaAs layer, a quantum InAs dot layer grown thereon, and a coating GaAs layer forming the GaAs matrix with the said GaAs buffer layer. Then, when detecting the form of the said curve like a hysteresis loop, this measurement is repeated in the heterostructures with different thickness of the coating GaAs layer within the maximum thickness determined by the area width of the surface barrier space charge at the zero voltage in this heterostructure, and the presence of the GaAs matrix deep defects near the layer of the InAs quantum dots is judged on increasing the hysteresis width with increasing the coating GaAs layer thickness.

EFFECT: expanding the technological capabilities and improving the accuracy of monitoring the presence of the GaAs matrix deep defects near the layer of the InAs quantum dots by reliable estimating the capture of the charge carriers by the deep defects near the said layer of the quantum dots, providing a high workability level of the said control in connection with the adequacy of using the available research equipment.

3 cl, 3 dwg