METHOD OF DETECTION OF THE DEGREE OF INFLUENCE OF DEFECT FORMATION ON THE RECOMBINATION TIME OF CARRIER IN SEMICONDUCTOR QUANTUM POINTS BASED ON THE HETEROJUNCTION OF THE FIRST TYPE Russian patent published in 2017 - IPC H01L21/66 

FIELD: physics.

SUBSTANCE: in the claimed method, the photosensitivity spectra at different temperatures are measured in two photodiode structures, low-defect and highly defect, containing a layer of quantum dots differing in the concentration of point defects in the latter; from the measured spectra, the temperature dependences of the photosensitivity in the region of the main optical transition of quantum dots are constructed and the dependences by the high-temperature saturation region. Then, by means of appropriate measurements of the parameters for the low-defect and highly defect photodiode structures and the corresponding calculations, the desired change in the recombination lifetime of carriers corresponding to an increase in the concentration of point defects in the quantum dot layer is judged.

EFFECT: development of an efficient indirect method of determining the change of the recombination lifetime of carriers in semiconductor quantum dots based heterojunction of the first kind in connection with a change in the concentration of point defects in the layer of said quantum dots, without requiring the use of complicated and inaccessible expensive measuring equipment by identifying new diagnostic possibilities experimentally more simple photoelectric spectroscopy method of semiconductor quantum-well heterostructures based on the use of standard equipment.

3 cl, 6 dwg