FIELD: metallurgy.
SUBSTANCE: invention refers to method of III group metal nitride film cultivation by chemical precipitation from gas phase with evacuated plasma, to device for method implementation, and to III group metal nitride film, and can be applied in manufacturing of LED, laser diodes and other high-capacity superhigh frequency transistor devices. Method involves heating of item selected out of group including substrate and substrate with buffer layer in cultivation chamber at approx. 400°C - 750°C temperature range, generation of active neutral nitrogen components in nitrogen plasma located at a distance from cultivation chamber, and transition of active neutral nitrogen components to cultivation chamber. Reaction mix is formed in cultivation chamber and includes III group metal component capable or reaction with nitrogen component so as to form III group metal nitride film, and III group metal nitride film is formed on the heated item in conditions enabling film utilisation in devices.
EFFECT: cultivation of III group metal nitride film with oxygen concentration under 1,6 atomic %.
26 cl, 21 dwg, 10 ex, 1 tbl
