METHOD OF MAKING SEMICONDUCTOR HETEROSTRUCTURES WITH ATOMICALLY SMOOTH InGaP AND InP STOP LAYERS ON GaAs AND InP SUBSTRATES Russian patent published in 2019 - IPC H01L21/8252 

FIELD: electronic equipment.

SUBSTANCE: invention relates to electronic and optoelectronic engineering and can be used for production of monolithic integrated circuits operating in centimeter and millimeter ranges of wavelengths, as well as for production of vertical-emitting lasers of near infrared range. According to the invention there described is a method of making semiconductor heterostructures with atomically smooth InGaP and InP stop layers on GaAs and InP substrates and proposing structures of semiconductor heterostructures which provide formation of atomically smooth stop layers. Invention provides stable formation of atomically smooth phosphorus-containing InGaP and InP stop layers in layers of solid solutions consisting of indium and gallium arsenides, does not adversely affect parameters of manufactured devices. For stable formation of an atomically smooth stop layer of InGaP in heterostructures on GaAs substrates, a buffer layer of GaAs is grown, then successively an InGaP layer and a protective layer of GaP with thickness of 0.6–1.3 nm and only then a coating layer of arsenide is grown. For stable formation of atomically smooth stop layer InP in heterostructures on InP substrates, InGaAs buffer layer is grown, then layer InP and protective layer InGaP with thickness of 0.6–1.3 nm and only then coating layer of arsenide is grown.

EFFECT: formation of stop layers using described method provides formation of atomically smooth phosphorus-containing stop layers InGaP and InP in layers of solid solutions consisting of indium and gallium arsenides, and accurate control of etching depth over entire area of epitaxial plate when making devices of electronic and optoelectronic equipment.

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