FIELD: semiconductor engineering; producing gallium arsenide surfaces free from carbon- containing impurities. SUBSTANCE: after chemical and mechanical polishing surface is treated for maximum 10 min with hydrogen peroxide solution. Solution is doped, in addition, with 2-7.4 mass percent of group 1 alkali metal salt, such as NaC1, KC1, $$$. Treatment is conducted for 7-15 min until oxide of 80-90 $$$ grows on surface. Carbon fouling level on surface is not over 3.2-3.6 atomic percent. Just prior to epitaxy, oxide layer is removed by chemical treatment. EFFECT: improved quality of gallium arsenide surface due to reduced level of carbon pollutants. 1 tbl
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