FIELD: microelectronics. SUBSTANCE: process is aimed at reduction of labour input in manufacture of structures by formation of sections of monosilicon of different thickness with single etching and at increased output of good structures by exclusion of operation of pattern photolithography in formation of mask for etching of sections of monosilicon with diminished thickness. Layer of silicon nitride is formed on silicon monocrystal substrate. Mask with windows to etch substrate for manufacture of monosilicon sections with diminished thickness is produced from mentioned layer. Layer of silicon oxide is grown over unmasked surface of substrate. Combination mask is formed from silicon nitride and oxide with windows to etch isolating grooves. Isolating grooves having depth equal to difference between thicknesses of monosilicon sections with increased and diminished thicknesses are etched. Silicon nitride mask is removed. Monosilicon sections with diminished thickness are formed simultaneously with etching of isolating grooves with depth equal to thickness of sections with increased thickness. Windows of mask are grown with silicon oxide by etching of substrate through mask windows of silicon nitride. Bearing layer of polysilicon is deposited on manufactured pattern. Parts of substrate are removed to open monosilicon sections with diminished and increased thickness and components of integrated circuits are formed in monosilicon sections. EFFECT: reduced labour input, increased output of good structures. 6 dwg
