METHOD OF PRODUCING CARBON FILMS WITH BORON-DOPED DIAMOND Russian patent published in 2016 - IPC C30B29/04 

Abstract RU 2585311 C1

FIELD: manufacturing technology.

SUBSTANCE: invention relates to technology of thin-film materials and can be used in designing of passive and active elements of micro- and optoelectronic devices. Method of producing carbon films with diamond structure doped with boron, carried out by chemical deposition from gas phase onto carbon film placed in reactor substrate, alloying substance is boron in solid phase with density more than 95 % of theoretical value is placed outside zone of high-frequency discharge at distance from substrate, less than free pass length of boron atoms, and alloying of films process is carried out by spraying boron by autonomous source of laser radiation with power of 0.05-1.5 W/cm2.

EFFECT: increased output of films with reproducible electrical parameters.

3 cl, 2 dwg, 1 tbl

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RU 2 585 311 C1

Authors

Gulyaev Yurij Vasilevich

Chucheva Galina Viktorovna

Afanasev Mikhail Sergeevich

Dates

2016-05-27Published

2014-12-11Filed