FIELD: film deposition from gaseous phase. SUBSTANCE: during gaseous phase deposition of films on substrates, at least one gaseous dope (indicator) is introduced in gaseous phase and its concentration is periodically or stepwise changed at the same time varying one of optimized variables of deposition process. EFFECT: facilitated detection of variables region enabling high rate of deposition and optimal desired parameters of film of high uniformity throughout substrate holder area with limited number or experiments in multidimensional range of process variables. 5 cl, 6 dwg
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