FIELD: film deposition from gaseous phase. SUBSTANCE: during gaseous phase deposition of films on substrates, at least one gaseous dope (indicator) is introduced in gaseous phase and its concentration is periodically or stepwise changed at the same time varying one of optimized variables of deposition process. EFFECT: facilitated detection of variables region enabling high rate of deposition and optimal desired parameters of film of high uniformity throughout substrate holder area with limited number or experiments in multidimensional range of process variables. 5 cl, 6 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR INCREASING EFFICIENCY OF DOPING AND CHANGING CONDUCTIVITY TYPE OF AMORPHOUS HYDROGENATED SILICON SLIGHTLY DOPED WITH ACCEPTOR IMPURITIES | 2016 |
|
RU2660220C2 |
| METHOD OF PRODUCING AMORPHOUS SILICON FILMS CONTAINING NANOCRYSTALLINE INCLUSIONS | 2012 |
|
RU2536775C2 |
| METHOD OF PRODUCING EPITAXIAL SILICON STRUCTURE | 2024 |
|
RU2822539C1 |
| METHOD OF PRODUCING LOCALLY DOPED SILICON FILM WITH GIVEN CHARACTERISTICS FOR MICROELECTRONIC DEVICES | 2023 |
|
RU2817080C1 |
| METHOD FOR PREPARING PHOTOACTIVE MULTILAYER HETEROSTRUCTURE OF MICROCRYSTALLINE SILICONE | 2013 |
|
RU2599769C2 |
| MANUFACTURING METHOD OF SOLAR ENERGY CONVERTER WITH HIGH EFFICIENCY | 2019 |
|
RU2698491C1 |
| METHOD FOR PRODUCING NANOCRYSTALLINE SILICON/AMORPHOUS HYDROGENATED SILICON HETEROJUNCTION FOR SOLAR ELEMENTS AND SOLAR ELEMENT WITH SUCH HETEROJUNCTION | 2016 |
|
RU2667689C2 |
| METHOD OF MAKING OHMIC CONTACTS IN THIN-FILM DEVICES ON AMORPHOUS UNDOPED SEMICONDUCTORS | 2009 |
|
RU2392688C1 |
| METHOD FOR PRODUCING OHMIC CONTACTS IN THIN-FILM DEVICES BUILT AROUND AMORPHOUS HYDROGENATED SEMICONDUCTORS | 2002 |
|
RU2229755C2 |
| PROCESS OF DEPOSITION OF FILMS OF HYDROGENIZED SILICON | 1994 |
|
RU2100477C1 |
