HEAT SINK (VERSIONS) Russian patent published in 2016 - IPC H01L23/36 H01L23/367 H01L23/373 

Abstract RU 2589942 C1

FIELD: electricity.

SUBSTANCE: invention relates to solid-state electronics, particularly to heat sinks of high-power semiconductor devices, and can be used in various engineering devices operating with high specific thermal loads. Heat sink for cooling at least one local heat source comprises a base in form of a diamond plate. On said base there is a layer structure made of heat-conducting plates. Plates of layered structure are arranged parallel to base. Portion of adjacent surfaces of said plates has thermal contact, and in areas between other parts of said surfaces there is a heat-capacitance substance.

EFFECT: higher power removed from local heat source (semiconductor device) with loner operating of latter.

9 cl, 1 dwg

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RU 2 589 942 C1

Authors

Leontev Igor Anatolevich

Yashnov Yurij Mikhajlovich

Dates

2016-07-10Published

2015-06-30Filed