POWER SEMICONDUCTOR DEVICE Russian patent published in 2010 - IPC H01L29/68 

FIELD: physics.

SUBSTANCE: power semiconductor device, which has a semiconductor crystal on one side of which there is at least one power circuit element, and through the opposite side the semiconductor crystal lies coaxially on a heat-removing base which is metal-coated on at least two opposite sides, where the said base is made from high-heat conduction material, and a solder layer joined to the base. Part of the surface of the metal-coated heat-removing base on which the semiconductor crystal lies has a convex or concave shape. The said shape of part of the surface of the metal-coated heat-removing base is coaxial and symmetrical about the central axis of the semiconductor crystal. The convex or concave shape and consequently the convex or concave value of part of the surface of the metal-coated heat-removing base between its centre and the edge is determined from a given relationship.

EFFECT: invention enables to increase reliability and output power of a power semiconductor device owing to reduction of internal voltage and high efficiency of heat removal.

5 cl, 1 dwg, 1 tbl