HEAT RADIATION SENSOR AND ITS MANUFACTURING METHOD Russian patent published in 2016 - IPC G01J5/20 H01L49/02 B82B1/00 

FIELD: heat engineering.

SUBSTANCE: invention can be used for heat insulation of heat radiation detectors. Core of invention is that a device for thermal detection of infrared radiation includes a pixel on a semiconductor substrate, the pixel includes the first section and the second section, the first section is located onto the surface of the semiconductor substrate and includes electric circuits, the second section is separated from the first section and is located immediately above it, the second section is planar and includes legs, a micro-membrane and a temperature detector located on it, the second section is supported by columns, one of the legs has one end integrally connected with the micro-membrane and the other end integrally connected to one of the columns, the other leg has one end integrally connected with the micro-membrane and the other end integrally connected to the other of the columns, legs provide electrical connection of the temperature detector with electric circuits via appropriate columns and thermal insulation of the temperature detector and the micro-membrane from the semiconductor substrate, one of the legs includes the first part of the first dielectric layer, the first part of the second dielectric layer, part of the electroconductive layer, this part of the electroconductive layer provides the above said electrical connection, the first part of the first dielectric layer adjoins the first surface of the electroconductive layer and the first part of the second dielectric layer adjoins the second surface of the electroconductive layer, the first and the second surfaces of the electroconductive layer are opposed surfaces of the part of the electroconductive layer, part of the electroconductive layer is a source of mechanical stresses inducing tension stresses in the first part of the first dielectric layer and tension stresses in the first part of the second dielectric layer.

EFFECT: technical result is the possibility of reduction of heat conductivity of the dielectric layers.

20 cl, 24 dwg, 2 tbl