FIELD: manufacture of transducers of temperature, pressure, thermal and gas flows, etc. SUBSTANCE: dielectric film from layers of SiO2 having thickness of 0.05-0.1 μ and layers of Si3N4 having thickness 0.1 μ is formed on silicon substrate. Temperature-sensitive metal layer is deposited on it. Substrate is etched anisotropically to produce microbridge. EFFECT: facilitated manufacture of thermoresistive converters. 1 dwg
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