PIEZOELECTRIC PRESSURE TRANSDUCER Russian patent published in 1996 - IPC

Abstract RU 2066856 C1

FIELD: measurement technology. SUBSTANCE: invention is used in piezoelectric and electroacoustic converters to measure noises. Piezoelectric pressure transducer has membrane 1 on which planes side compensating film 2 is placed, film 3 of piezoelectric material with two electrodes 4, 5 is located above it. First electrode is placed on to outer surface of film. Membrane 1 is made of silicon, compensating film 2 - of silicon dioxide oxidizer thermally. Second electrode 5 is put of film. Film 6 produced from silicon dioxide is located between electrode 5 and film 3 of piezoelectric material. Thickness of membrane is chosen 0.5-5.0 μm, thickness of compensating film equal 0.1-0.3 μm Thickness of film of piezoelectric material equals 1.0-1.5 μm. For some usage of specified transducer there is used silicon membrane doped with boron up to concentration 1019 см-3. EFFECT: enhanced operational reliability and stability. 4 cl, 2 dwg

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RU 2 066 856 C1

Authors

Mishachev V.I.

Likhovid S.V.

Korsakov V.S.

Trutnev N.F.

Samsonov N.S.

Vasenkov A.A.

Mazurenko S.N.

Akulova G.V.

Semenikhina L.A.

Dates

1996-09-20Published

1993-06-28Filed