PHOTOVOLTAIC STRUCTURE Russian patent published in 2014 - IPC H01L31/04 B82B1/00 

FIELD: physics.

SUBSTANCE: invention relates to semiconductor structures used to convert solar radiation into electrical energy. The photovoltaic single-junction structure is a double-layer component of a p-n heterojunction a-SiC/c-Si. A layer of n-type amorphous silicon carbide with film thickness of 6-20 nm is deposited on a prepared surface of a p-type monocrystalline silicon substrate by non-reactive magnetron sputtering in argon from a solid-state SiC target. An upper electrode is in the form of a contact comb of silver or copper and is placed directly on the a-SiC layer. A lower electrode of silver or copper is placed on the reverse side of the substrate of monocrystalline silicon. A photovoltaic structure using a polished, undeveloped surface of a substrate of monocrystalline silicon and without using solar radiation concentrators demonstrates efficiency of 7.83%.

EFFECT: converting solar radiation into electrical energy.

4 dwg, 1 ex