METHOD FOR WRITING IN MRAM-BASED MEMORY DEVICE WITH REDUCED POWER CONSUMPTION Russian patent published in 2015 - IPC G11C11/15 

FIELD: physics, computer engineering.

SUBSTANCE: invention relates to computer engineering. A method of writing in a memory device comprising a plurality of magnetoresistive random access memory (MRAM), wherein each MRAM cell to be written by using a thermally-assisted switching (TAS) write operation, includes a magnetic tunnel junction (MTJ) having a resistance that can be varied during a write operation when the MTJ is heated to a high threshold temperature, and a selected transistor electrically connected to the MTJ; a plurality of word lines and bit lines connecting MRAM cells along a row and a column, respectively; the method comprising supplying a bit line voltage to one of the bit lines and a word line voltage to one of the word lines for passing a heating current through the MTJ of a selected MRAM cell; once the MTJ has reached the high threshold temperature, varying the resistance of the MTJ; and cooling the MTJ to freeze said resistance in its written value; said word line voltage is a word line overload voltage which is higher than the base operating voltage of the MRAM cells such that the heating current has a magnitude that is high enough for heating the MTJ to the predetermined high threshold temperature.

EFFECT: reduced power consumption when writing in a memory device.

8 cl, 3 dwg