FIELD: metalworking.
SUBSTANCE: invention relates to production of ion-conducting membrane with Ionic conductivity by plasma sputtering. Membrane is deposited in form of layer (11) on substrate (10) in working chamber. Initial material (P) is sputtered on surface of substrate (10) in form of working beam (2) by means of working gas (G). Initial material is introduced into plasma at low working pressure, which is not higher than 10,000 Pa, and partially or completely fused in it. In working chamber (12) during sputtering is fed oxygen (O2;22) with flow rate, which is at least 1 % of total flow rate of working gas.
EFFECT: technical result is improved quality of ion-conducting membrane.
16 cl, 1 dwg, 2 ex
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