METHOD OF MAKING OHMIC CONTACTS FOR AlGaN/GaN NITRIDE HETEROSTRUCTURES Russian patent published in 2017 - IPC H01L21/285 

FIELD: physics, instrument-making.

SUBSTANCE: invention relates to technologies of forming ohmic contacts for AlGaN/GaN heterostructures and can be used in making semiconductor devices, particularly microwave field-effect transistors. The technical result is achieved due to that the method of making ohmic contacts for AlGaN/GaN heterostructures, after etching conducting and barrier layers of the heterostructure, comprises further etching of windows of a SiO₂ dielectric film before deposition of ohmic contacts, which avoids the need to sputter metal layers at an angle and improves the contact itself on the vertical boundary of the formed window of deposited metals with two-dimension electron gas.

EFFECT: invention reduces specific resistance of ohmic contacts and simplifies the process of making ohmic contacts.

2 cl, 4 dwg