METHOD FOR PRODUCING OHMIC CONTACTS TO NITRIDE HETEROSTRUCTURES ON Si/Al BASIS Russian patent published in 2017 - IPC H01L21/28 

FIELD: chemistry.

SUBSTANCE: invention relates to a method of forming ohmic contacts to nitride heterostructures technology of in-fired ohmic contacts and can be used in the manufacture of semiconductor devices with a high degree of integration. Ohmic contacts are formed by successive deposition in vacuo four layers: silicon (Si), aluminium (Al), nickel (Ni) and gold (Au), using a photoresist mask on the surface portion of the nitride heterostructure followed static annealing on graphite table in nitrogen. Using silicon sublayer provides during heat treatment by diffusion doping subcontact region, forming highly doped semiconductor and changing the work out of it, allowing the formation of ohmic contact with the high-alumina region under contact.

EFFECT: decrease the annealing temperature, improved morphology ohmic contacts and increasing their adaptability.

3 cl, 4 dwg