METHOD FOR CONNECTING SILICON CHIP TO CHIP CARRIER OF SEMICONDUCTOR DEVICE Russian patent published in 2001 - IPC

FIELD: microelectronics; manufacture of semiconductor devices and integrated circuits. SUBSTANCE: method involves evaporation of four following metals onto underside surface of silicon plate in single process cycle evaporation of these metals being made in following sequence: chromium-nickel-tin- silver. Plate is sliced into chips and the latter are soldered to chip carrier at 300-320 C for 2-5 s. Proposed combination of evaporated metals ensures reliable chip-to-carrier contact, 100% solder distribution over chip surface, absence of pores in solder, and improved output characteristics of device. EFFECT: enhanced reliability of chip-to-carrier contact and stability of joint. 2 ex