FIELD: gas analysis.
SUBSTANCE: invention relates to the field of gas analysis, in particular to detection devices used to register and measure the content of trace ammonia. The ammonia microimpurity sensor contains a semiconductor base and a substrate, while the semiconductor base is made of a polycrystalline film of a solid solution of composition (CdS)0.67(CdTe)0.33 deposited on a substrate made in the form of an electrode pad of a piezoelectric resonator.
EFFECT: increasing the sensitivity and manufacturability of the sensor.
1 cl, 3 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| MICROIMPURITIES OF AMMONIA SENSOR | 2019 |
|
RU2700035C1 |
| AMMONIA TRACE SENSOR | 2020 |
|
RU2743155C1 |
| TRACE AMMONIA SENSOR | 2023 |
|
RU2797767C1 |
| AMMONIA TRACE CONTAMINANT SENSOR | 2017 |
|
RU2652646C1 |
| AMMONIA SEMICONDUCTOR SENSOR | 2015 |
|
RU2613482C1 |
| NANOSEMICONDUCTOR GAS SENSOR | 2013 |
|
RU2530455C1 |
| SEMICONDUCTOR GAS SENSOR OF AMMONIA TRACE IMPURITIES | 2015 |
|
RU2607733C1 |
| AMMONIA TRACE CONTAMINANT DETECTOR | 2008 |
|
RU2400737C2 |
| SEMICONDUCTIVE ANALYZER OF AMMONIA | 2016 |
|
RU2631009C2 |
| SEMICONDUCTOR GAS SENSOR | 2005 |
|
RU2281485C1 |
Authors
Dates
2022-05-20—Published
2021-09-13—Filed