METHOD TO MANUFACTURE MULTI-LEVEL THIN-FILM MICROCIRCUIT CHIPS Russian patent published in 2013 - IPC H01L21/00 H05K3/14 H05K3/46 H05K3/40 

FIELD: electricity.

SUBSTANCE: in the method to manufacture multi-level thin-film microcircuit chips, including alternate vacuum application of conductor layers onto a substrate with subsequent development of a pattern of a chip by the method of photolithography, application of insulating layers and formation of level-to-level connections in them from one conductor layer to another by etching transition windows in the insulation and their dusting with a conducting material, level-to-level connections are formed by dusting of transition windows simultaneously by sputtering of the conductor layer of the appropriate level and making a pattern of the chip by the method of photolithography, besides, level-to-level connections are formed of a larger size than the size of transition windows in plan. In each subsequent insulating layer they etch transition windows of a larger size compared to the previous one.

EFFECT: simplified technology to make microcircuit chips and their higher reliability.

2 cl, 2 dwg