METHOD FOR PRODUCING EPITAXIAL LAYER OF III- NITRIDE SUPERCONDUCTOR ON FOREIGN SUBSTRATE Russian patent published in 2002 - IPC

FIELD: manufacture of semiconductor devices. SUBSTANCE: method is proposed for producing epitaxial layer of III-nitride (GaN, AlN, InN) semiconductor on foreign substrate by gas- phase epitaxy of metalloorganic compounds in manufacturing semiconductor lasers, light-emitting diodes, ultraviolet photodetectors, high-temperature diodes, and transistors. Method includes stages of buffer layer formation and epitaxial growth using streams of metalloorganic compounds and ammonia with pulsating streams of metalloorganic compounds in both stages, pulse length t_n(s) during buffer stage formation being found from equation t_n = r_сrn^-2/3/v₁, that during epitaxial layer growth stage t_e(s), from equation t_e = h/v₂, pulse-to-pulse space length Δt(s) meeting relationships Δt>t₁, Δt>t_e, where n is sequence number of pulse (1, 2, ...); r_cr is critical radius of nucleus on foreign substrate, ; v₁ is rate of layer formation during buffer layer formation stage, ; h is initial height of epitaxial-layer heterogeneous surface profile, ; v₂ is rate of layer growth during epitaxial growth stage, EFFECT: improved quality of epitaxial layer due to reducing density of flaws and dislocations. 2 ex