FIELD: power industry.
SUBSTANCE: method for atomic layer deposition of material on the batch of substrates comprises charging batch of substrates into the substrate holder is in the loading chamber of the reactor to deposit the material, with the formation in the carrier substrate vertical feet horizontally oriented substrate, wherein the substrate disposed one above the other, and turning of the holder substrates for horizontal stack of vertically oriented substrates, in which substrates are arranged one behind the other, and lowering the substrate holder in the reaction chamber for applying said reactor material by sequential self-limiting surface reactions by exposing the batch of substrates pulses separated in time supply of precursors. Device for carrying out mentioned method comprises a rotation mechanism configured to rotate the substrate holder for receipt of the horizontal foot vertically oriented substrate, wherein the substrate are arranged one after the other, and a lift adapted for lowering the substrate holder in the reaction chamber of said reactor, for applying material by sequential self-limiting by affecting surface reactions on substrates batch pulses separated in time supply of precursors.
EFFECT: load system is provided from the top of the reactor for deposition of materials with a vertical gas flow, which allows to load the substrate, oriented horizontally, and also eliminates the need to turn each substrate individually by turning the substrate holder as a whole and minimize movement of the substrates are loaded into the reactors cluster.
13 cl, 6 dwg
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Authors
Dates
2017-05-23—Published
2012-11-23—Filed