FIELD: technological processes.
SUBSTANCE: disclosed group of inventions relates to atomic layer deposition. System for atomic layer deposition (ALD) comprises a reaction chamber assembly comprising a vacuum chamber, a reaction chamber inside a vacuum chamber, a gas inlet device and a fore line configured to provide a horizontal gas flow in the reaction chamber, a drive device comprising a reaction chamber cover and at least a first loading lock assembly comprising a first loading gateway. Drive device is configured to receive substrate or batch of substrates to be processed, and transfer of substrate or batch of substrates through first loading sluice horizontally into vacuum chamber. Drive device is further configured to lower the substrate or batch of substrates inside the vacuum chamber into the reaction chamber, thereby closing the reaction chamber with a cover. ALD method using said ALD system includes transfer of substrate or batch of substrates into first loading gateway, their transfer from the first loading sluice through the first loading valve and loading hole horizontally into the vacuum chamber, reception in the vacuum chamber and lowering into the reaction chamber inside the vacuum chamber. Fact of lowering provides closing the reaction chamber with a cover, performing atomic layer deposition in the reaction chamber, raising the substrate or batch of substrates from the reaction chamber, receiving the substrate or batch of substrates from the reaction chamber and transfer of substrate or batch of substrates through first or second loading valve and loading opening from vacuum chamber into first or second loading gateway.
EFFECT: improved atomic layer deposition system with high-efficiency treatment of substrates by batches.
28 cl, 13 dwg
