ATOMIC LAYER DEPOSITION (ALD) DEVICE Russian patent published in 2021 - IPC C23C16/54 C23C16/455 

FIELD: chemistry.

SUBSTANCE: invention relates to a device for atomic layer deposition (ALD) of a coating on a substrate surface. The specified device contains a reaction chamber located inside the vacuum chamber, with the possibility of placing a substrate or a batch of substrates, a gas inlet device and forlinia, made with the possibility of providing a horizontal gas flow in the reaction chamber. Forlinia is configured to exit the reaction chamber and extend inside the vacuum chamber to the outside of the vacuum chamber.

EFFECT: invention provides the possibility of simultaneous degassing and / or heating, ALD processing, including the ability to adjust the vacuum levels between the intermediate space and the reaction chamber, stabilize the temperature of the substrates in the reaction chamber and cooling, including adjusting the discharge pressure.

25 cl, 13 dwg